Raman scattering from oval defects in GaAs epilayers
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.109982
Reference20 articles.
1. Some investigations on oval defects in MBE-grown GaAs
2. Thermodynamic study on the origin of oval defects in GaAs grown by molecular‐beam epitaxy
3. Elimination of gallium-source related oval defects in molecular-beam epitaxy of GaAs
4. A comprehensive study and methods of elimination of oval defects in MBE-GaAs
5. Electrical Properties of Oval Defects in GaAs Grown by MBE
Cited by 7 articles. 订阅此论文施引文献 订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献
1. Polarized Raman spectroscopy of corrugated MBE grown GaAs (6̄3̄1̄) homoepitaxial films;Journal of Crystal Growth;2013-09
2. Study of the GaAs MBE growth on (631)-oriented substrates by Raman spectroscopy;Journal of Crystal Growth;2007-04
3. MicroRaman and phase stepping microscopy analysis of growth defects in GaAs/GaAs epilayers;Materials Science and Technology;1998-12
4. Microphotoluminescence of oval defects in a GaAs layer grown by molecular beam epitaxy;Applied Physics Letters;1998-10-05
5. Raman spectroscopic analysis of the free carrier concentration in GaAs oval defects;Journal of Applied Physics;1995-04-15
1.学者识别学者识别
2.学术分析学术分析
3.人才评估人才评估
"同舟云学术"是以全球学者为主线，采集、加工和组织学术论文而形成的新型学术文献查询和分析系统，可以对全球学者进行文献检索和人才价值评估。用户可以通过关注某些学科领域的顶尖人物而持续追踪该领域的学科进展和研究前沿。经过近期的数据扩容，当前同舟云学术共收录了国内外主流学术期刊6万余种，收集的期刊论文及会议论文总量共计约1.5亿篇，并以每天添加12000余篇中外论文的速度递增。我们也可以为用户提供个性化、定制化的学者数据。欢迎来电咨询！咨询电话：010-8811{复制后删除}0370
www.globalauthorid.com
TOP
Copyright © 2019-2024 北京同舟云网络信息技术有限公司 京公网安备11010802033243号 京ICP备18003416号-3