Raman spectroscopic analysis of the free carrier concentration in GaAs oval defects
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.358573
Reference18 articles.
1. Classification and origins of GaAs oval defects grown by molecular beam epitaxy
2. Electrical Properties of Oval Defects in GaAs Grown by MBE
3. Some investigations on oval defects in MBE-grown GaAs
4. Properties of GaAs/Al0.53Ga0.47As Avalanche Photodiode with Superlattice Fabricated by Molecular Beam Epitaxy
5. Particulates: An origin of GaAs oval defects grown by molecular beam epitaxy
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