WNxSchottky diodes on plasma treated GaAs
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.348718
Reference24 articles.
1. Characterization of WNx/GaAs Schottky Contacts Formed by Reactive RF Sputtering
2. Characterization of reactively sputtered WNx film as a gate metal for self-alignment GaAs metal–semiconductor field effect transistors
3. High‐temperature annealing characteristics of tungsten and tungsten nitride Schottky contacts to GaAs under different annealing conditions
4. Refractory metal nitride rectifying contacts on GaAs
5. Characterization of WSix/GaAs Schottky contacts
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1. In situ cleaning of GaAs and AlxGa1−xAs surfaces and production of ohmic contacts using an atomic hydrogen source based on a reflected arc discharge;Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films;1999-07
2. Development of InxGa1−xAs-based ohmic contacts for p-type GaAs by radio-frequency sputtering;Journal of Electronic Materials;1998-10
3. Real time in situ monitoring of surfaces during glow discharge processing: NH3 and H2 plasma passivation of GaAs;Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures;1995-03
4. Ga2O3films for electronic and optoelectronic applications;Journal of Applied Physics;1995-01-15
5. Characterization of WNx metallization prepared by ion implantation of nitrogen;Thin Solid Films;1994-09
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