Characterization of WSix/GaAs Schottky contacts
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.94400
Reference4 articles.
1. TiW Silicide gate self-alignment technology for ultra-high-speed GaAs MESFET LSI/VLSI's
2. Microstructure and Schottky barrier height of iridium silicides formed on silicon
3. Parallel silicide contacts
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1. Thermal stability of Cr-Ni-Co alloy Schottky contacts on MBE -GaAs;Semiconductor Science and Technology;1998-07-01
2. Formation of WSi-based ohmic contacts to n-type GaAs;Thin Solid Films;1997-05
3. Predicting the crystallization temperature variation with composition for amorphous silicon-based binary alloy thin films;Journal of Applied Physics;1997-02
4. High-temperature aging studies on Ru/n-GaAs Schottky contacts;Semiconductor Science and Technology;1996-02-01
5. Origins of Residual Stress in Mo and Ta Films: the Role of Impurities, Microstructural Evolution, and Phase Transformations;MRS Proceedings;1996
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