Unipolar behavior of asymmetrically doped strained Si0.5Ge0.5 tunneling field-effect transistors
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.4751356
Reference19 articles.
1. Band-to-Band Tunneling in Carbon Nanotube Field-Effect Transistors
2. Steep Subthreshold Slope n- and p-Type Tunnel-FET Devices for Low-Power and Energy-Efficient Digital Circuits
3. Tunnel field-effect transistors as energy-efficient electronic switches
4. Tunneling Field-Effect Transistors (TFETs) With Subthreshold Swing (SS) Less Than 60 mV/dec
5. Fully-depleted Ge interband tunnel transistor: Modeling and junction formation
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