Ultrafast carrier dynamics in InxGa1−xN (0001) epilayers: Effects of high fluence excitation
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.2190456
Reference9 articles.
1. The Roles of Structural Imperfections in InGaN-Based Blue Light-Emitting Diodes and Laser Diodes
2. Localized exciton and its stimulated emission in surface mode from single-layerInxGa1−xN
3. Observation of lasing from photopumped InGaN/GaN heterostructures in an edge emitting configuration
4. Probing ultrafast carrier and phonon dynamics in semiconductors
5. Stimulated emission characteristics of InGaN/GaN multiple quantum wells: Excitation length and excitation density dependence
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