Opposite carrier dynamics and optical absorption characteristics under external electric field in nonpolar vs polar InGaN/GaN based quantum heterostructures-Reference-Cited by-同舟云学术

Opposite carrier dynamics and optical absorption characteristics under external electric field in nonpolar vs polar InGaN/GaN based quantum heterostructures

Published:2011-03-08 Issue:6 Volume:19 Page:5442
ISSN:1094-4087
Container-title:Optics Express
language:en
Short-container-title:Opt. Express

Author:

Sari Emre,Nizamoglu Sedat,Choi Jung-Hun,Lee Seung-Jae,Baik Kwang-Hyeon,Lee In-Hwan,Baek Jong-Hyeob,Hwang Sung-Min,Demir Hilmi Volkan

Publisher

The Optical Society

Subject

Atomic and Molecular Physics, and Optics

Reference20 articles.

1. High‐power InGaN single‐quantum‐well‐structure blue and violet light‐emitting diodes

2. Room‐temperature continuous‐wave operation of InGaN multi‐quantum‐well structure laser diodes

3. Color-converting combinations of nanocrystal emitters for warm-white light generation with high color rendering index

4. III-nitride blue microdisplays

5. Blue quantum electroabsorption modulators based on reversed quantum confined Stark effect with blueshift

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