Improvement of near-ultraviolet nitride-based light emitting diodes with mesh indium tin oxide contact layers
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.2387941
Reference13 articles.
1. Characteristics of InGaN-Based UV/Blue/Green/Amber/Red Light-Emitting Diodes
2. Current and Temperature Dependences of Electroluminescence of InGaN-Based UV/Blue/Green Light-Emitting Diodes
3. Increase in the extraction efficiency of GaN-based light-emitting diodes via surface roughening
4. Selective wet etching of p-GaN for efficient GaN-based light-emitting diodes
5. Nitride-Based Light-Emitting Diodes With p-AlInGaN Surface Layers
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2. Improvement in Light Extraction Efficiency of InGaN/GaN Blue Light Emitting Diodes Using Sidewall Texturing;Journal of Nanoscience and Nanotechnology;2019-04-01
3. Light-extraction enhancement of GaN-based 395 nm flip-chip light-emitting diodes by an Al-doped ITO transparent conductive electrode;Optics Letters;2018-05-31
4. Improvement of optical and electrical properties of indium tin oxide layer of GaN-based light-emitting diode by surface plasmon in silver nanoparticles;Thin Solid Films;2015-09
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