Use of tertiarybutylarsine in the metalorganic chemical vapor deposition growth of GaAs
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.98226
Reference18 articles.
1. High purity GaAs prepared from trimethylgallium and arsine
2. Growth of high-purity GaAs epilayers by MOCVD and their applications to microwave MESFET's
3. Mechanism of carbon incorporation in MOCVD GaAs
4. The growth and characterization of high quality MOVPE GaAs and GaAlAs
5. OMCVD growth of GaAs and AlGaAs using a solid as source
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