Defect‐state generation in Czochralski‐grown (100) silicon rapidly annealed with incoherent light
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.338848
Reference2 articles.
1. Radiation Annealing of Boron-Implanted Silicon with a Halogen Lamp
2. Deep‐level transient spectroscopy: A new method to characterize traps in semiconductors
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