Characteristics of ZrO2 gate dielectric deposited using Zrt–butoxide and Zr(NEt2)4 precursors by plasma enhanced atomic layer deposition method
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.1513196
Reference13 articles.
1. Electrical properties of thin SiON/Ta2O5 gate dielectric stacks
2. Thermal stability and electrical characteristics of ultrathin hafnium oxide gate dielectric reoxidized with rapid thermal annealing
3. Intermixing at the tantalum oxide/silicon interface in gate dielectric structures
4. Electrical and materials properties of ZrO2 gate dielectrics grown by atomic layer chemical vapor deposition
Cited by 63 articles. 订阅此论文施引文献 订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献
1. Surface Morphology of Various Matrixes with Zirconium Oxide Coatings Synthetized by Alternating Pulsing of Zirconium(IV) <i>tert</i>-Butoxide and Water Vapors Treatment of the Surface;Журнал общей химии;2024-07-02
2. Dynamic RON Degradation in AlGaN/GaNMIS-HEMTs With Si3N4 or Si3N4/ZrO2Passivation Layer;IEEE Transactions on Electron Devices;2024-05
3. Impact of Zr Content in Atomic Layer Deposited Hf1−Zr O2 Thin Films;Ferroelectricity in Doped Hafnium Oxide: Materials, Properties and Devices;2019
4. Electronic and Optical Properties of Atomic Layer-Deposited ZnO and TiO2;Journal of Electronic Materials;2018-05-22
5. One-Step Synthesis of Carbon-Hybridized ZnO on Polymeric Foams by Atomic Layer Deposition for Efficient Absorption of Oils from Water;Industrial & Engineering Chemistry Research;2018-01-19
1.学者识别学者识别
2.学术分析学术分析
3.人才评估人才评估
"同舟云学术"是以全球学者为主线，采集、加工和组织学术论文而形成的新型学术文献查询和分析系统，可以对全球学者进行文献检索和人才价值评估。用户可以通过关注某些学科领域的顶尖人物而持续追踪该领域的学科进展和研究前沿。经过近期的数据扩容，当前同舟云学术共收录了国内外主流学术期刊6万余种，收集的期刊论文及会议论文总量共计约1.5亿篇，并以每天添加12000余篇中外论文的速度递增。我们也可以为用户提供个性化、定制化的学者数据。欢迎来电咨询！咨询电话：010-8811{复制后删除}0370
www.globalauthorid.com
TOP
Copyright © 2019-2024 北京同舟云网络信息技术有限公司 京公网安备11010802033243号 京ICP备18003416号-3