Exploitation of a self-limiting process for reproducible formation of ultrathin Ni1−xPtx silicide films-Reference-Cited by-同舟云学术

Exploitation of a self-limiting process for reproducible formation of ultrathin Ni1−xPtx silicide films

Published:2010-12-20 Issue:25 Volume:97 Page:252108
ISSN:0003-6951
Container-title:Applied Physics Letters
language:en
Short-container-title:Appl. Phys. Lett.

Author:

Zhang Zhen,Yang Bin,Zhu Yu,Gaudet Simon,Rossnagel Steve,Kellock Andrew J.,Ozcan Ahmet,Murray Conal,Desjardins Patrick,Zhang Shi-Li,Jordan-Sweet Jean,Lavoie Christian

Publisher

AIP Publishing

Subject

Physics and Astronomy (miscellaneous)

Link

http://aip.scitation.org/doi/pdf/10.1063/1.3529459

Reference12 articles.

1. Surface-energy triggered phase formation and epitaxy in nanometer-thick Ni1−xPtx silicide films

2. Morphological stability and specific resistivity of sub-10 nm silicide films of Ni1−xPtx on Si substrate

3. Phase formation and thermal stability of ultrathin nickel-silicides on Si(100)

4. NiSi salicide technology for scaled CMOS

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