Electrical characteristics of Al contact to NiSi using thin W layer as a barrier
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.92571
Reference12 articles.
1. Refractory silicides for integrated circuits
2. Composite silicide gate electrodes—Interconnections for VLSI device technologies
3. Composite silicide gate electrodes—Interconnections for VLSI device technologies
4. Aluminum/nickel silicide contacts on silicon
5. Electrical and mechanical features of the platinum silicide‐aluminum reaction
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1. Integrity of shallow junction CMOS structures with Ti/TiN/AlSiCu and Ti/TiN/AlCu contact metallization;Solid-State Electronics;1995-12
2. Tungsten and tungsten–carbon thin films deposited by magnetron sputtering;Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films;1993-01
3. Growth and microstructure of epitaxial 45°-rotated bcc W layers on NaCl-structure MgO(001) substrates and TiN(001) buffer layers;Journal of Crystal Growth;1992-10
4. Silicon Schottky barriers and p-n junctions with highly stable aluminum contact metallization;IEEE Electron Device Letters;1991-06
5. Barrier effect of e-beam evaporated tungsten interlayer in Al/W/PtSi metallization layer;Journal of Electronic Materials;1988-09
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