Growth and microstructure of epitaxial 45°-rotated bcc W layers on NaCl-structure MgO(001) substrates and TiN(001) buffer layers-Reference-Cited by-同舟云学术

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Growth and microstructure of epitaxial 45°-rotated bcc W layers on NaCl-structure MgO(001) substrates and TiN(001) buffer layers

Published:1992-10 Issue:3-4 Volume:123 Page:344-356
ISSN:0022-0248
Container-title:Journal of Crystal Growth
language:en
Short-container-title:Journal of Crystal Growth

Author:

Kimura H.,Petrov I.,Adibi F.,Greene J.E.

Funder

U.S. Department of Energy

Semiconductor Research Corporation

Publisher

Elsevier BV

Subject

Materials Chemistry,Inorganic Chemistry,Condensed Matter Physics

Reference33 articles.

1. The use of titanium-based contact barrier layers in silicon technology

2. Contact resistance of LPCVD W/Al and PtSi/W/Al metallization

3. Electrical characteristics of Al contact to NiSi using thin W layer as a barrier

4. Aluminum‐silicide reactions. I. Diffusion, compound formation, and microstructure

5. Aluminum‐silicide reactions. II. Schottky‐barrier height

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1. Multiterminal epitaxial tungsten nanostructures on MgO/GaAs(001) substrates: Temperature effects in ballistic electron transport;Journal of Applied Physics;2022-10-28

2. Growth of single-crystal CrN on MgO(001): Effects of low-energy ion-irradiation on surface morphological evolution and physical properties;Journal of Applied Physics;2002-03-15

3. Phase composition and microstructure of polycrystalline and epitaxial TaNx layers grown on oxidized Si(001) and MgO(001) by reactive magnetron sputter deposition;Thin Solid Films;2002-01

4. Epitaxial metallic nanostructures on GaAs;Surface Science;2001-06

5. Reaction paths and kinetics of aluminide formation in Al/epitaxial‐W(001) model diffusion barrier systems;Journal of Applied Physics;1995-07

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