Cathodoluminescence studies of chevron features in semi-polar (112¯2) InGaN/GaN multiple quantum well structures-Reference-Cited by-同舟云学术

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Cathodoluminescence studies of chevron features in semi-polar (112¯2) InGaN/GaN multiple quantum well structures

Published:2018-05-07 Issue:17 Volume:123 Page:174502
ISSN:0021-8979
Container-title:Journal of Applied Physics
language:en
Short-container-title:Journal of Applied Physics

Author:

Brasser C.¹,Bruckbauer J.¹^ORCID,Gong Y.²,Jiu L.²,Bai J.²,Warzecha M.³,Edwards P. R.¹^ORCID,Wang T.²,Martin R. W.¹^ORCID

Affiliation:

1. Department of Physics, SUPA, University of Strathclyde, Glasgow G4 0NG, United Kingdom

2. Department of Electronic and Electrical Engineering, University of Sheffield, Sheffield S1 3JD, United Kingdom

3. Strathclyde Institute of Pharmacy and Biomedical Sciences, University of Strathclyde, Glasgow G4 0RE, United Kingdom

Funder

Engineering and Physical Sciences Research Council

Higher Education Funding Council for England

Publisher

AIP Publishing

Subject

General Physics and Astronomy

Link

http://aip.scitation.org/doi/pdf/10.1063/1.5021883

Reference33 articles.

1. Theoretical Study of Orientation Dependence of Piezoelectric Effects in Wurtzite Strained GaInN/GaN Heterostructures and Quantum Wells

2. Green Semipolar (202̄1̄) InGaN Light-Emitting Diodes with Small Wavelength Shift and Narrow Spectral Linewidth

3. Materials and growth issues for high-performance nonpolar and semipolar light-emitting devices

4. Indium incorporation and emission properties of nonpolar and semipolar InGaN quantum wells

5. Semi-polar nitride surfaces and heterostructures

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1. Pulse‐Modulation Controllable Monolithic Full‐Color Semipolar GaN‐based Light Emitting Diodes;Advanced Optical Materials;2023-07-23

2. Spatial distribution of optical intensity of overgrown semi-polar (20-21) InGaN/GaN multiple quantum wells dominated by surface morphology;AIP Advances;2023-06-01

3. The effect of ammonia partial pressure on the growth of semipolar (11–22) InGaN/GaN MQWs and LED structures;Materials Science and Engineering: B;2023-05

4. Growth of (101¯1) Semipolar GaN‐Based Light‐Emitting Diode Structures on Silicon‐on‐Insulator;physica status solidi (b);2023-03-18

5. Microdisk-Type Multicolor Semipolar Nitride-Based Light-Emitting Diodes;ACS Applied Nano Materials;2022-07-06

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