Excimer laser melting of GaAs: Real‐time optical study

Author:

Solis J.,Afonso C. N.,Piqueras J.

Publisher

AIP Publishing

Subject

General Physics and Astronomy

Cited by 19 articles. 订阅此论文施引文献 订阅此论文施引文献,注册后可以免费订阅5篇论文的施引文献,订阅后可以查看论文全部施引文献

1. High-quality single-crystalline epitaxial regrowth on pulsed laser melting of Ti implanted GaAs;Materials Science in Semiconductor Processing;2023-01

2. Strong subbandgap photoconductivity in GaP implanted with Ti;Progress in Photovoltaics: Research and Applications;2017-12-06

3. Planar nanowires fabricated by thermal gratings on the GaAs(001) surface;Journal of Vacuum Science & Technology B, Nanotechnology and Microelectronics: Materials, Processing, Measurement, and Phenomena;2017-05

4. Theoretical and experimental study of laser induced damage on GaAs by nanosecond pulsed irradiation;Optics and Lasers in Engineering;2011-02

5. Heat flow model for pulsed laser melting and rapid solidification of ion implanted GaAs;Journal of Applied Physics;2010-07

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