Tin diffusion and segregation in GaAs processed with a pulsed ruby laser
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.346267
Reference6 articles.
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5. A device for laser beam diffusion and homogenisation
Cited by 6 articles. 订阅此论文施引文献 订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献
1. Regularities in the Stark widths and shifts of spectral lines of singly-ionized aluminium;Journal of Quantitative Spectroscopy and Radiative Transfer;1996-09
2. Raman characterization of GaAs doped with Sn by laser assisted diffusion;Materials Science and Engineering: B;1993-06
3. Raman and point contact current-voltage characterization of laser-induced diffusion in GaAs;Applied Physics A Solids and Surfaces;1992-12
4. Vacancy-associated Te sites in GaAs;Physical Review B;1992-03-15
5. Excimer laser melting of GaAs: Real‐time optical study;Journal of Applied Physics;1992-01-15
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