High-quality single-crystalline epitaxial regrowth on pulsed laser melting of Ti implanted GaAs-Reference-Cited by-同舟云学术

High-quality single-crystalline epitaxial regrowth on pulsed laser melting of Ti implanted GaAs

Published:2023-01 Issue: Volume:153 Page:107191
ISSN:1369-8001
Container-title:Materials Science in Semiconductor Processing
language:en
Short-container-title:Materials Science in Semiconductor Processing

Author:

Algaidy S.^ORCID,Caudevilla D.,Perez-Zenteno F.,García-Hernansanz R.,García-Hemme E.,Olea J.,San Andrés E.,Duarte-Cano S.,Siegel J.,Gonzalo J.,Pastor D.,del Prado A.

Publisher

Elsevier BV

Subject

Mechanical Engineering,Mechanics of Materials,Condensed Matter Physics,General Materials Science

Reference46 articles.

1. Increasing the efficiency of ideal solar cells by photon induced transitions at intermediate levels;Luque;Phys. Rev. Lett.,1997

2. Energetics of formation of Ti Ga 3 As 4 and Ti Ga 3 P 4 intermediate band materials;Palacios;J. Chem. Phys.,2006

3. Intermediate bands versus levels in non-radiative recombination;Luque;Phys. B Condens. Matter,2006

4. Intermediate-band photovoltaic solar cell based on ZnTe: O;Wang;Appl. Phys. Lett.,2009

5. Diluted II-VI oxide semiconductors with multiple band gaps;Yu;Phys. Rev. Lett.,2003

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