Charge storage and tunneling mechanism of Ni nanocrystals embedded HfOxfilm
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.4948751
Reference21 articles.
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2. Determination of theGe-nanocrystal/SiO2matrix interface trap density from the small signal response of charge stored in the nanocrystals
3. Hf-based high-k materials for Si nanocrystal floating gate memories
4. High-performance organic nano-floating-gate memory devices based on graphite nanocrystals as charge-trapping elements and high-k Ta2O5 as a controlled gate dielectric
5. Organic field-effect transistor nonvolatile memories utilizing sputtered C nanoparticles as nano-floating-gate
Cited by 2 articles. 订阅此论文施引文献 订阅此论文施引文献,注册后可以免费订阅5篇论文的施引文献,订阅后可以查看论文全部施引文献
1. Visible-light enhanced charge storage characteristics of amorphous Ni-doped HfO2 films;Journal of Physics D: Applied Physics;2018-07-06
2. Effect of thickness-dependent crystal mosaicity and chemical defect on electric properties in yttrium-stabilized epitaxial HfO2 thin films;Applied Physics Letters;2017-03-20
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