High-performance organic nano-floating-gate memory devices based on graphite nanocrystals as charge-trapping elements and high-k Ta2O5 as a controlled gate dielectric-Reference-Cited by-同舟云学术

High-performance organic nano-floating-gate memory devices based on graphite nanocrystals as charge-trapping elements and high-k Ta2O5 as a controlled gate dielectric

Published:2014 Issue:27 Volume:2 Page:5342
ISSN:2050-7526
Container-title:Journal of Materials Chemistry C
language:en
Short-container-title:J. Mater. Chem. C

Author:

Dai Min-Kun,Lin Tai-Yuan,Yang Min-Hua,Lee Chih-Kung,Huang Chih-Ching,Chen Yang-Fang

Publisher

Royal Society of Chemistry (RSC)

Subject

Materials Chemistry,General Chemistry

Link

http://pubs.rsc.org/en/content/articlepdf/2014/TC/C4TC00598H

Reference43 articles.

1. Nanotube Optoelectronic Memory Devices

2. Influence of electrode material on the resistive memory switching property of indium gallium zinc oxide thin films

3. Transparent indium gallium zinc oxide transistor based floating gate memory with platinum nanoparticles in the gate dielectric

4. Conjugated-Polymer-Functionalized Graphene Oxide: Synthesis and Nonvolatile Rewritable Memory Effect

5. High-Performance Non-Volatile Organic Ferroelectric Memory on Banknotes

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