In situ time-resolved optical studies of Al oxidation for magnetic tunnel junctions
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.1379046
Reference8 articles.
1. Spin polarized tunneling in ferromagnetic junctions
2. Magnetic tunneling applied to memory (invited)
3. Compositional, structural, and electrical characterization of plasma oxidized thin aluminum layers for spin-tunnel junctions
4. Optical and in situ characterization of plasma oxidized Al for magnetic tunnel junctions
5. In-situ characterization of oxide growth for fabricating spin-dependent tunnel junctions
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1. Low-Temperature Plasma Oxidation of Aluminum by Ar-O2 Mixtures in a Dielectric-Barrier Discharge Reactor;Plasma Chemistry and Plasma Processing;2023-07-15
2. Remote plasma atomic layer deposited Al2O3 4H SiC MOS capacitor with remote H2 plasma passivation and post metallization annealing;Microelectronic Engineering;2015-11
3. Chapter One Spin-Dependent Tunneling in Magnetic Junctions;Handbook of Magnetic Materials;2007
4. Conversion from Al to Al2O3 of subnanometer barriers for magnetic tunnel junctions monitored in real time;Journal of Applied Physics;2006-04-15
5. Real-time monitoring of plasma oxidation dynamics of subnanometer Al2O3 barriers for magnetic tunnel junctions;Applied Physics Letters;2006-01-16
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