Competition of shot noise and hot-electron noise in GaAs planar-doped barrier diode-Reference-Cited by-同舟云学术

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Competition of shot noise and hot-electron noise in GaAs planar-doped barrier diode

Published:1998-10-26 Issue:17 Volume:73 Page:2488-2490
ISSN:0003-6951
Container-title:Applied Physics Letters
language:en
Short-container-title:Appl. Phys. Lett.

Author:

Gružinskis V.,Liberis J.,Matulionis A.,Sakalas P.,Starikov E.,Shiktorov P.,Szentpáli B.,Van Tuyen V.,Hartnagel H. L.

Publisher

AIP Publishing

Subject

Physics and Astronomy (miscellaneous)

Link

http://aip.scitation.org/doi/pdf/10.1063/1.122491

Reference10 articles.

1. Planar-doped barriers in GaAs by molecular beam epitaxy

2. Über spontane Stromschwankungen in verschiedenen Elektrizitätsleitern

3. Hot‐electron properties of GaAs planar‐doped barrier diodes

4. Tunneling in planar‐doped barrier diodes

5. Current flow mechanisms in GaAs planar‐doped‐barrier diodes with high built‐in fields

Cited by 6 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Noise, Hot Carrier Effects;Wiley Encyclopedia of Electrical and Electronics Engineering;2007-11-16

2. Noise in solid state sensors;SPIE Proceedings;2004-05-25

3. Upconversion of partition noise in semiconductors operating under periodic large-signal conditions;Physical Review B;2003-04-10

4. Comparative study of 200-300 GHz microwave power generation in GaN TEDs by the Monte Carlo technique;Semiconductor Science and Technology;2001-08-10

5. GaAs planar doped barrier diodes;Materials Science and Engineering: B;2001-03

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