Current flow mechanisms in GaAs planar‐doped‐barrier diodes with high built‐in fields
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.354217
Reference11 articles.
1. Hot electron spectroscopy
2. An ultrahigh speed modulated barrier photodiode made on P-type gallium arsenide substrates
3. Regenerative switching device using MBE-grown gallium arsenide
4. Characteristics of planar doped FET structures
Cited by 4 articles. 订阅此论文施引文献 订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献
1. Hot electron effects on the operation of potential well barrier diodes;Journal of Semiconductors;2019-12-01
2. Hot-Electron Noise in a GaAs Planar-Doped Barrier Diode: Experiment and Monte Carlo Simulation;Materials Science Forum;1998-12
3. Competition of shot noise and hot-electron noise in GaAs planar-doped barrier diode;Applied Physics Letters;1998-10-26
4. Study of the I–V characteristics of planar-doped-barrier electron emitters;Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures;1994-03
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