Persistent photoconductivity in Ga1−xInxNyAs1−y
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.124865
Reference18 articles.
1. InGaAsN solar cells with 1.0 eV band gap, lattice matched to GaAs
2. 1-eV solar cells with GaInNAs active layer
3. Photocurrent of 1eV GaInNAs lattice-matched to GaAs
4. Bowing parameter of the band-gap energy of GaNxAs1−x
5. Growth of GaAsN alloys by low‐pressure metalorganic chemical vapor deposition using plasma‐cracked NH3
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