Numerical analysis for optimization of the sidewall conditions in a capacitively coupled plasma deposition reactor
Author:
Affiliation:
1. Department of Mechanical Engineering, Dong-A University, Busan 49315, South Korea
2. Department of Electrical Engineering, Pusan National University, Busan 46241, South Korea
Funder
National Research Council of Science and Technology
Dong-A University
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.5120265
Reference25 articles.
1. Analysis of intermediate pressure SiH4/He capacitively coupled plasma for deposition of an amorphous hydrogenated silicon film in consideration of thermal diffusion effects
2. Effects of design and operating variables on process characteristics in a methane discharge: a numerical study
3. Effects of interelectrode gap on high frequency and very high frequency capacitively coupled plasmas
4. Modelling of a large scale reactor for plasma deposition of silicon
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