Boron deactivation in heavily boron-doped Czochralski silicon during rapid thermal anneal: Atomic level understanding
Author:
Funder
NSFC
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.4862662
Reference16 articles.
1. Deactivation and diffusion of boron in ion-implanted silicon studied by secondary electron imaging
2. Evidence on the mechanism of boron deactivation in Ge-preamorphized ultrashallow junctions
3. Deactivation of ultrashallow boron implants in preamorphized silicon after nonmelt laser annealing with multiple scans
4. Boron deactivation in preamorphized silicon on insulator: Efficiency of the buried oxide as an interstitial sink
5. The fraction of substitutional boron in silicon during ion implantation and thermal annealing
Cited by 2 articles. 订阅此论文施引文献 订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献
1. Carbon effect on the survival of vacancies in Czochralski silicon during rapid thermal anneal;Journal of Applied Physics;2017-07-28
2. Bulk Silicon Crystals with the High Boron Content, Si1–xBx: Two Semiconductors Form an Unusual Metal;Chemistry of Materials;2014-09-08
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