Evolution of Ge/Si(100) island morphology at high temperature
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.1479204
Reference23 articles.
1. Strain-Driven Alloying in Ge/Si(100) Coherent Islands
2. Evolution of Ge/Si(100) islands: Island size and temperature dependence
3. Diffusional narrowing of Ge on Si(100) coherent island quantum dot size distributions
4. Composition and its impact on shape evolution in dislocated Ge(Si)/Si islands
5. Evidence of Si presence in self-assembled Ge islands deposited on a Si(001) substrate
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2. Ultrathin films of Ge on the Si(100)2 × 1 surface;Surface and Interface Analysis;2017-11-28
3. Secondary growth mechanism of SiGe islands deposited on a mixed-phase microcrystalline Si by ion beam co-sputtering;Nanotechnology;2015-10-12
4. Morphological evolution of self-assembled SiGe islands based on a mixed-phase pre-SiGe island layer grown by ion beam sputtering deposition;Applied Surface Science;2015-02
5. STM study of pulsed laser assisted growth of Ge quantum dot on Si(1 0 0)-(2 × 1);The European Physical Journal Applied Physics;2014-02
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