Competitive carrier interactions influencing the emission dynamics of GaAsSb-capped InAs quantum dots
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.4769431
Reference21 articles.
1. Room-temperature continuous-wave operation of a single-layered 1.3 μm quantum dot laser
2. Long-wavelength lasing from multiply stacked InAs/InGaAs quantum dots on GaAs substrates
3. Suppression of InAs∕GaAs quantum dot decomposition by the incorporation of a GaAsSb capping layer
4. Atomic scale study of the impact of the strain and composition of the capping layer on the formation of InAs quantum dots
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1. From Dot to Ring: Tunable Exciton Topology in Type-II InAs/GaAsSb Quantum Dots;Physics of Quantum Rings;2018
2. Carrier dynamics of InAs quantum dots with GaAs1−xSbx barrier layers;Applied Physics Letters;2017-11-06
3. Silicon-Based Single Quantum Dot Emission in the Telecoms C-Band;ACS Photonics;2017-07-06
4. Excitonic structure and pumping power dependent emission blue-shift of type-II quantum dots;Scientific Reports;2017-03-30
5. Type II InAs/GaAsSb quantum dots: Highly tunable exciton geometry and topology;Applied Physics Letters;2015-11-02
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