Design and characteristics of strained InAs/InAlAs composite-channel heterostructure field-effect transistors
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.1831545
Reference27 articles.
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3. Microwave performance of a digital alloy barrier Al(Sb,As)/AlSb/InAs heterostructure field-effect transistor
4. High-speed InP/InGaAs HBTs operated at submilliampere collector currents
5. B. Brar, Ph.D dissertation, UC Santa Barbara, 1995.
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2. Effect of Strongly Mismatched GaAs and InAs Inserts in a InAlAs Buffer Layer on the Structural and Optical Properties of Metamorphic InAs(Sb)/InGaAs/InAlAs/GaAs Quantum-Confined Heterostructures;JETP Letters;2019-03
3. InAs‐based heterostructure field‐effect transistor using AlAs 0.16 Sb 0.84 double barriers;Electronics Letters;2014-07
4. Sb-based semiconductors for low power electronics;Journal of Materials Chemistry C;2013
5. Antimonide-based depletion-mode metal-oxide-semiconductor field-effect transistors using small-bandgap InAs channel layers;Journal of Vacuum Science & Technology B, Nanotechnology and Microelectronics: Materials, Processing, Measurement, and Phenomena;2010-11
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