Emitter‐collector reciprocity of double heterojunction bipolar transistors: A three‐dimensional analysis and proof for transistors with heavily doped and degenerate base regions-Reference-Cited by-同舟云学术

Emitter‐collector reciprocity of double heterojunction bipolar transistors: A three‐dimensional analysis and proof for transistors with heavily doped and degenerate base regions

Published:1988-02-15 Issue:4 Volume:63 Page:1212-1217
ISSN:0021-8979
Container-title:Journal of Applied Physics
language:en
Short-container-title:Journal of Applied Physics

Author:

Mohammad S. Noor

Publisher

AIP Publishing

Subject

General Physics and Astronomy

Link

http://aip.scitation.org/doi/pdf/10.1063/1.339983

Reference19 articles.

1. Two integral relations pertaining to the electron transport through a bipolar transistor with a nonuniform energy gap in the base region

2. Two integral relations pertaining to the electron transport through a bipolar transistor with a nonuniform energy gap in the base region

3. Transport theory of the double heterojunction bipolar transistor based on current balancing concept

4. Transport theory of the double heterojunction bipolar transistor based on current balancing concept

5. Transport theory of the double heterojunction bipolar transistor based on current balancing concept

Cited by 3 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Reciprocity in heterojunction bipolar transistors;Solid-State Electronics;1992-11

2. Effect of junction and band‐gap grading on the electrical performance of molecular beam epitaxial grown AlGaAs/GaAs/AlGaAs double‐heterojunction bipolar transistors;Journal of Applied Physics;1991-01-15

3. Analytical investigation of the junction space‐charge region properties of heterojunction semiconductor devices: Application ton‐AlzGa1−zAs/p‐GaAs system;Journal of Applied Physics;1988-06-15