Effect of junction and band‐gap grading on the electrical performance of molecular beam epitaxial grown AlGaAs/GaAs/AlGaAs double‐heterojunction bipolar transistors-Reference-Cited by-同舟云学术

Effect of junction and band‐gap grading on the electrical performance of molecular beam epitaxial grown AlGaAs/GaAs/AlGaAs double‐heterojunction bipolar transistors

Published:1991-01-15 Issue:2 Volume:69 Page:1067-1070
ISSN:0021-8979
Container-title:Journal of Applied Physics
language:en
Short-container-title:Journal of Applied Physics

Author:

Mohammad S. Noor,Chen J.,Chyi J.‐I.,Morkoç H.

Publisher

AIP Publishing

Subject

General Physics and Astronomy

Link

http://aip.scitation.org/doi/pdf/10.1063/1.347373

Reference18 articles.

1. Heterostructure bipolar transistors and integrated circuits

2. Transport and related properties of (Ga, Al)As/GaAs double heterostructure bipolar junction transistors

3. Double heterojunction NpN GaAlAs/GaAs bipolar transistor

4. Optimum emitter grading for heterojunction bipolar transistors

5. Optimum emitter grading for heterojunction bipolar transistors

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3. Evidence of Zero Potential Spike Energy in AlGaAs/GaAs Heterostructure Emitter Bipolar Transistors;Japanese Journal of Applied Physics;1993-10-01

4. The study of emitter thickness effect on the heterostructure emitter bipolar transistors;Journal of Applied Physics;1993-07-15

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