Evidence of Zero Potential Spike Energy in AlGaAs/GaAs Heterostructure Emitter Bipolar Transistors-Reference-Cited by-同舟云学术

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Evidence of Zero Potential Spike Energy in AlGaAs/GaAs Heterostructure Emitter Bipolar Transistors

Published:1993-10-01 Issue:Part 2, No. 10A Volume:32 Page:L1397-L1399
ISSN:0021-4922
Container-title:Japanese Journal of Applied Physics
language:en
Short-container-title:Jpn. J. Appl. Phys.

Author:

Chen H. R.,Lee C. P.,Chang C. Y.,Tsai K. L.,Tsang J. S.

Publisher

IOP Publishing

Subject

General Physics and Astronomy,Physics and Astronomy (miscellaneous),General Engineering

Cited by 6 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Temperature Dependence of Current Gain, Ideality Factor, and Offset Voltage of AlGaAs/GaAs and InGaP/GaAs HBTs;IEEE Transactions on Electron Devices;2009-12

2. Investigation of InGaP/GaAs heterojunction bipolar transistor with doping graded base;Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures;2003

3. A model for heterostructure-emitter bipolar transistors;Solid-State Electronics;1997-09

4. A new InP‐based heterojunction bipolar transistor utilizing an In0.53Al0.22Ga0.25As base;Applied Physics Letters;1995-01-16

5. High current gain, low offset voltage heterostructure emitter bipolar transistors;IEEE Electron Device Letters;1994-09

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