Stretched exponential illumination time dependence of positive charge and spin generation in amorphous silicon nitride
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.104255
Reference16 articles.
1. Stable photoinduced paramagnetic defects in hydrogenated amorphous silicon nitride
2. Investigation of the light‐induced effects in nitrogen‐rich silicon nitride films
3. Spatial charge distribution in as-deposited and UV-illuminated gate-quality nitrogen-rich silicon nitride
4. Electrically active point defects in amorphous silicon nitride: An illumination and charge injection study
5. The nature of the dominant deep trap in amorphous silicon nitride films: Evidence for a negative correlation energy
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