Spatial charge distribution in as-deposited and UV-illuminated gate-quality nitrogen-rich silicon nitride-Reference-Cited by-同舟云学术

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Spatial charge distribution in as-deposited and UV-illuminated gate-quality nitrogen-rich silicon nitride

Published:1989-06 Issue:6 Volume:10 Page:277-279
ISSN:0741-3106
Container-title:IEEE Electron Device Letters
language:
Short-container-title:IEEE Electron Device Lett.

Author:

Kanicki J.,Jousse D.

Publisher

Institute of Electrical and Electronics Engineers (IEEE)

Subject

Electrical and Electronic Engineering,Electronic, Optical and Magnetic Materials

Link

http://xplorestaging.ieee.org/ielx1/55/1379/00031745.pdf?arnumber=31745

Cited by 12 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Electrostatic Properties of Silane Monolayers in an Electrolytic Environment;The Journal of Physical Chemistry C;2009-09-01

2. Morphology of LPCVD Si3N4 films after high temperature treatment and HF etching;Journal of Non-Crystalline Solids;1995-07

3. Effect of ultraviolet illumination on the charge trapping behaviour in SiNx/InP metal-insulator-semiconductor structure provided by plasma enhanced chemical vapour deposition;Journal of Materials Science Letters;1994

4. Electrical Properties of Silicon Nitride Films Prepared by Photo-Assisted Chemical Vapor Deposition under Controlled Decomposition of Ammonia;Japanese Journal of Applied Physics;1993-12-30

5. Confirmation of the Correlation between the Electrical Hysteresis and Silicon Dangling Bond Density in Silicon Nitride by UV Irradiation of Nearly Hysteresis Free Metal-Nitride-Silicon Capacitors;Japanese Journal of Applied Physics;1991-12-01

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