Terahertz spectroscopy of an electron-hole bilayer system in AlN/GaN/AlN quantum wells-Reference-Cited by-同舟云学术

Terahertz spectroscopy of an electron-hole bilayer system in AlN/GaN/AlN quantum wells

Published:2017-08-14 Issue:7 Volume:111 Page:073102
ISSN:0003-6951
Container-title:Applied Physics Letters
language:en
Short-container-title:Appl. Phys. Lett.

Author:

Condori Quispe H.¹^ORCID,Islam S. M.²,Bader S.²^ORCID,Chanana A.¹^ORCID,Lee K.²,Chaudhuri R.²,Nahata A.¹^ORCID,Xing H. G.²³,Jena D.²³,Sensale-Rodriguez B.¹

Affiliation:

1. Department of Electrical and Computer Engineering, University of Utah, Salt Lake City, Utah 84112, USA

2. School of Electrical and Computer Engineering, Cornell University, Ithaca, New York 14853, USA

3. Department of Materials Science and Engineering, Cornell University, Ithaca, New York 14853, USA

Funder

Division of Materials Research (DMR)

Division of Electrical, Communications and Cyber Systems (ECCS)

Office of Naval Research (ONR)

Air Force Office of Scientific Research (AFOSR)

Publisher

AIP Publishing

Subject

Physics and Astronomy (miscellaneous)

Link

http://aip.scitation.org/doi/am-pdf/10.1063/1.4996925

Reference21 articles.

1. Emerging gallium nitride based devices

2. Nitride-based semiconductors for blue and green light-emitting devices

3. GaN-Based RF Power Devices and Amplifiers

4. Strained GaN quantum-well FETs on single crystal bulk AlN substrates

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