An amorphous phase formation at palladium / silicon oxide (Pd/SiOx) interface through electron irradiation - electronic excitation process
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.4936629
Reference24 articles.
1. Synthesis of metal silicide at metal/silicon oxide interface by electronic excitation
2. Reaction of thin metal films with SiO2 substrates
Cited by 5 articles. 订阅此论文施引文献 订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献
1. Synthesis and temperature-dependent evolution of the phase composition in palladium-containing silicon oxycarbide ceramics;Journal of the European Ceramic Society;2022-09
2. Transformation of Au–Pd alloy nanoparticles to core-shell nanoparticles by electron irradiation;Journal of Alloys and Compounds;2020-08
3. In situ atomic-level observation of the formation of platinum silicide at platinum-silicon oxide interfaces under electron irradiation;AIP Advances;2018-05
4. Electron-irradiation-induced crystallization at metallic amorphous/silicon oxide interfaces caused by electronic excitation;Journal of Applied Physics;2016-04-28
5. Erratum: “An amorphous phase formation at palladium / silicon oxide (Pd/SiOx) interface through electron irradiation - electronic excitation process” [AIP Advances 5, 117145 (2015)];AIP Advances;2015-12
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