Synthesis of metal silicide at metal/silicon oxide interface by electronic excitation-Reference-Cited by-同舟云学术

Synthesis of metal silicide at metal/silicon oxide interface by electronic excitation

Published:2015-05-21 Issue:19 Volume:117 Page:194307
ISSN:0021-8979
Container-title:Journal of Applied Physics
language:en
Short-container-title:Journal of Applied Physics

Author:

Lee J.-G.¹,Nagase T.²³,Yasuda H.²³,Mori H.²

Affiliation:

1. Powder & Ceramics Division, Korea Institute of Materials Science, Changwon, Gyeongnam 642-831, South Korea

2. Research Center for Ultra-High Voltage Electron Microscopy, Osaka University, Ibaraki, Osaka 567-0047, Japan

3. Division of Materials and Manufacturing Science, Graduate School of Engineering, Osaka University, Suita, Osaka 565-0871, Japan

Funder

Advanced characterization nanotechnology platform, nanotechnology platform program of the ministry of education, culture, sports, science and technology (MEXT), Japan

Publisher

AIP Publishing

Subject

General Physics and Astronomy

Link

http://aip.scitation.org/doi/pdf/10.1063/1.4921429

Reference15 articles.

1. Materials modification by electronic excitation

2. The silver halide photographic process

3. Formation of Porous GaSb Compound Nanoparticles by Electronic-Excitation-Induced Vacancy Clustering

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