Atomic and electronic structure of the ferroelectric BaTiO3/Ge(001) interface-Reference-Cited by-同舟云学术

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Atomic and electronic structure of the ferroelectric BaTiO3/Ge(001) interface

Published:2014-06-16 Issue:24 Volume:104 Page:242908
ISSN:0003-6951
Container-title:Applied Physics Letters
language:en
Short-container-title:Appl. Phys. Lett.

Author:

Fredrickson Kurt D.,Ponath Patrick,Posadas Agham B.,McCartney Martha R.,Aoki Toshihiro,Smith David J.,Demkov Alexander A.

Funder

USAFOSR

Publisher

AIP Publishing

Subject

Physics and Astronomy (miscellaneous)

Link

http://aip.scitation.org/doi/pdf/10.1063/1.4883883

Reference60 articles.

1. Academic and industry research progress in germanium nanodevices

2. n-Type Doping of Germanium from Phosphine: Early Stages Resolved at the Atomic Level

3. Evidence of Trigonal Dangling Bonds at the Ge(111)/Oxide Interface by Electrically Detected Magnetic Resonance

4. Ge based high performance nanoscale MOSFETs

5. High-Mobility Ge pMOSFET With 1-nm EOT $\hbox{Al}_{2} \hbox{O}_{3}/\hbox{GeO}_{x}/\hbox{Ge}$ Gate Stack Fabricated by Plasma Post Oxidation

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