Author:
Silveira M. A. G.,Santos R. B. B.,Leite F. G.,Araújo N. E.,Cirne K. H.,Melo M. A. A.,Rallo A.,Aguiar Vitor. A. P.,Aguirre F.,Macchione E. L. A.,Added N.,Medina N. H.
Cited by
2 articles.
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1. Comparing Rectangular and ELT MOSFET layouts under TID;2023 37th Symposium on Microelectronics Technology and Devices (SBMicro);2023-08-28
2. Neutron radiation hardness testing of 650V / 7.5 A GaN power HEMT;Radiation Physics and Chemistry;2020-01