Neutron radiation hardness testing of 650V / 7.5 A GaN power HEMT

Author:

Ahmed M.,Kucukgok B.,Yanguas-Gil A.,Hryn J.,Wender S.A.

Funder

U.S. Department of Energy

Publisher

Elsevier BV

Subject

Radiation

Reference6 articles.

1. Sic/GaN power semiconductor devices theoretical comparison and experimental evaluation;Li,2016

2. The Effect of Radiation on the Electrical Propertise of Aluminum Galium Nitride/Galium Nitride Heterostructures;McClory,2008

3. Future prospects of wide bandgap (WBG) semiconductor power switching devices;Shenai;IEEE Trans. Electron Devices,2015

4. Electric field and temperature effects in irradiated MOSFETs;Silveira,2016

5. Recovery behaviour resulting from thermal annealing in n-MOSFETs irradiated by 20 MeV protons;Takakura;Semicond. Sci. Technol.,2003

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1. Ionizing radiation defects and reliability of Gallium Nitride-based III-V semiconductor devices: A comprehensive review;Microelectronics Reliability;2024-08

2. Defect-curing effects of fast neutrons on n-type GaN;Materials Chemistry and Physics;2024-03

3. Research on GaN Digital DC/DC Power Supply for Aerospace Applications;2023 3rd International Conference on Electrical Engineering and Control Science (IC2ECS);2023-12-29

4. Defect-Curing Effects of Fast Neutrons on N-Type Gan;2023

5. A Study of Neutron Induced Single-Event Damage in AlGaN/GaN HEMTs;2022 IEEE Radiation Effects Data Workshop (REDW) (in conjunction with 2022 NSREC);2022-07

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