Defect-Curing Effects of Fast Neutrons on N-Type Gan

Author:

Kim Jeongwoo,Liu Yafei,Raghothamachar Balaji,Dudley Michael,Kwon Jae W.

Publisher

Elsevier BV

Reference34 articles.

1. THE PREPARATION AND PROPERTIES OF VAPOR-DEPOSITED SINGLE-CRYSTAL-LINE GaN;H P Maruska;Appl. Phys. Lett,1969

2. GaN Integration Technology, an Ideal Candidate for High-Temperature Applications: A Review;A Hassan;IEEE Access,2018

3. Comprehensive Review of Recent Progress on GaN High Electron Mobility Transistors: Devices, Fabrication and Reliability;F Zeng;Electronics,2018

4. Transistors based on gallium nitride (GaN), growth techniques, and nanostructures;H Ravanbakhsh;Journal of Theoretical and Applied Physics,2022

5. Growth of bulk GaN crystals;R Kucharski;Journal of Applied Physics,2020

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