Influence of defects in n−-GaN layer on the responsivity of Schottky barrier ultraviolet photodetectors
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.2450658
Reference20 articles.
1. 320×256 solar-blind focal plane arrays based on AlxGa1−xN
2. S. M. Sze, Physics of Semiconductor Devices, 2nd ed. (Wiley, New York, 1981), Chap. 13, p. 750.
3. Photovoltaic effects in GaN structures with p‐n junctions
4. X-ray diffraction analysis of the defect structure in epitaxial GaN
5. Scanning capacitance microscopy imaging of threading dislocations in GaN films grown on (0001) sapphire by metalorganic chemical vapor deposition
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