Implant‐dose dependence of grain size and {110} texture enhancements in polycrystalline Si films by seed selection through ion channeling
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.336344
Reference10 articles.
1. Low-temperature process to increase the grain size in polysilicon films
2. Solid phase epitaxial recrystallization of thin polysilicon films amorphized by silicon ion implantation
3. Annealing behavior of thin polycrystalline silicon films damaged by silicon ion implantation in the critical amorphization range
4. Modifying Polycrystalline Films Through Ion Channelling
5. Stochastic model for grain size versus dose in implanted and annealed polycrystalline silicon films on SiO2
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