Oxidation‐induced stacking faults in silicon. II. Electrical effects in P N diodes
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.1662972
Reference47 articles.
1. Silicon power device material problems
2. Effect of Dislocations on Breakdown in Silicon p‐n Junctions
3. Visible Light Emission and Microplasma Phenomena in Silicon p–n Junction, I.
4. Visible Light Emission and Microplasma Phenomena in Silicon p-n Junction II. Classification of weak spots in diffused p-n junctions
5. Process‐Introduced Structural Defects and Junction Characteristics in N P N Silicon Epitaxial Planar Transistors
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