Electrochemical structuring of mechanically activated n‐InP(100) surfaces-Reference-Cited by-同舟云学术

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Electrochemical structuring of mechanically activated n‐InP(100) surfaces

Published:2005-06 Issue:9 Volume:2 Page:3359-3364
ISSN:1610-1634
Container-title:physica status solidi (c)
language:en
Short-container-title:phys. stat. sol. (c)

Author:

Hueppe M.¹,Schlierf U.¹,Gassiloud R.¹²,Michler J.²,Schmuki P.¹

Affiliation:

1. Department of Materials Science, LKO, University of Erlangen‐Nürnberg, Martensstrasse 7, 91058 Erlangen, Germany

2. Materials Measurement Research Group, Swiss Federal Laboratory for Materials Testing and Research (EMPA), Feuerwerkstrasse 39, 3602 Thun, Switzerland

Publisher

Wiley

Link

https://onlinelibrary.wiley.com/doi/pdf/10.1002/pssc.200461167

Cited by 3 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Influence of dislocations on the process of pore formation in n-InP (111) single crystals;Semiconductors;2011-01

2. Novel pore shape and self-organization effects in n-GaP(111);Journal of Solid State Electrochemistry;2009-01-06

3. Selective etching of n-InP(100) triggered at surface dislocations induced by nanoscratching;Electrochimica Acta;2006-02

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