Rigorous extraction tunability of Si-integrated Ba0.3Sr0.7TiO3 thin film up to 60 GHz
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.3454772
Reference9 articles.
1. Layered (BaxSr1−x)Ti1+yO3+z thin films for high frequency tunable devices
2. Evaluation of Ta2O5 as a buffer layer film for integration of microwave tunable Ba1−xSrxTiO3 based thin films with silicon substrates
3. Dispersion and loss of ferroelectric Ba0.5Sr0.5TiO3 thin films up to 110 GHz
4. Epitaxial growth of (001)-oriented Ba0.5Sr0.5TiO3 thin films on a-plane sapphire with an MgO/ZnO bridge layer
5. Dielectric microwave characterizations of (Ba,Sr)TiO3 film deposited on high resistivity silicon substrate: Analysis by two-dimensional tangential finite element method
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1. Macro and nanoscale properties of (001)-oriented Bi0.5Na0.5TiO3 lead-free piezoelectric thin films grown by sputtering on LaNiO3/Si substrates;Journal of Alloys and Compounds;2024-03
2. Nonlinear Effective Dielectric Properties of Barium Strontium Titanate Composites from 300MHz to 4GHz;Applied Composite Materials;2022-10-20
3. Ultra-High Tunability of $\text{Ba}_{(2/3)}\text{Sr}_{(1/3)}\text{TiO}_{3}$ -Based Capacitors Under Low Electric Fields;IEEE Microwave and Wireless Components Letters;2016-07
4. Characterization of the field-dependent permittivity of Ba0.5Sr0.5TiO3 thin films up to 110 GHz;IEICE Electronics Express;2016
5. Dielectric microwave properties of Si-integrated pulsed laser deposited (Ba, Sr)TiO3 thin films up to 110 GHz;Applied Physics Letters;2015-08-03
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