Dielectric microwave characterizations of (Ba,Sr)TiO3 film deposited on high resistivity silicon substrate: Analysis by two-dimensional tangential finite element method
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.3309423
Reference28 articles.
1. Misfit strain relaxation in (Ba0.60Sr0.40)TiO3 epitaxial thin films on orthorhombic NdGaO3 substrates
2. Surface Chemical and Leakage Current Density Characteristics of Nanocrystalline Ag-Ba0.5Sr0.5TiO3 Thin Films
3. Ceramic materials Ba(1−x)SrxTiO3 for electronics — Synthesis and characterization
4. Recent Progress in Materials Issues for Piezoelectric MEMS
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2. Ferroelectric and Dielectric Properties of Strontium Titanate Doped with Barium;Magnetism;2021-11-11
3. Characterization of the field-dependent permittivity of Ba0.5Sr0.5TiO3 thin films up to 110 GHz;IEICE Electronics Express;2016
4. Ferroelectric Phase Transition, Interfaces Quality, and Stress Evolution of TiO x /Ba x Sr1−x TiO3 Structures;Journal of the American Ceramic Society;2015-08-06
5. Dielectric microwave properties of Si-integrated pulsed laser deposited (Ba, Sr)TiO3 thin films up to 110 GHz;Applied Physics Letters;2015-08-03
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