Fabrication of GaAs tunnel junctions by a rapid thermal diffusion process
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.97012
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1. GaAs‐AlGaAs tunnel junctions for multigap cascade solar cells
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5. Precisely controlled shallowp+diffusions in GaAs
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2. Effects of various dopants on properties of GaAs tunneling junctions and p–i–n solar cells;Japanese Journal of Applied Physics;2017-07-18
3. Component Evaporation, Defect Annealing, and Impurity Diffusion in the III–V Semiconductors;Rapid Thermal Processing of Semiconductors;1997
4. Rapid Isothermal Processing (RIP);Handbook of Compound Semiconductors;1995
5. Electrical properties of p +/n + InGaAsP tunnel diodes with a bandgap of 0.95 eV grown by liquid phase epitaxy;Applied Physics A Solids and Surfaces;1994-08
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