High-power quantum-dot lasers at 1100 nm
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.125816
Reference17 articles.
1. Design parameters for lateral carrier confinement in quantum-dot lasers
2. Quantum-dot cw heterojunction injection laser operating at room temperature with an output power of 1 W
3. High-power continuous-wave operation of a InGaAs/AlGaAs quantum dot laser
4. Operating characteristics and their anisotropy in a high-power laser (1.5 W, 300 K) with a quantum-dot active region
5. Quantum-dot injection heterolaser with 3.3 W output power
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