Design parameters for lateral carrier confinement in quantum-dot lasers
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.124003
Reference5 articles.
1. Reduced lateral carrier diffusion for improved miniature semiconductor lasers
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5. The effects of lateral current spreading, carrier out‐diffusion, and optical mode losses on the threshold current density of GaAs‐AlχGa1−χAs stripe‐geometry DH lasers
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